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Doping otherwise insulating semiconductor wafers is done by the introduction of specific doping elements, through diffusion or ion implantation processes. #hole #electrons #diffusion #doping #silicon
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Doping otherwise insulating semiconductor wafers is done by the introduction of specific doping elements, through diffusion or ion implantation processes. #hole #electrons #diffusion #doping #silicon
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Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. | Shaalaa.com
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