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Defects in a semiconductor material introduce allowed energy states within the forbidden bandgap. Assume that a particular defect in silicon introduces two discrete levels: a donor level 0.25 eV above the top of the valence band and an acceptor level 0.65 eV above the top of the valence band. The charge state of each defect is a function of the position of the Fermi level. ( a ) Sketch the charge density of each defect as the Fermi leyel moves from Eq to Ec. Which defect level dominates in (i) h

SOLVED: Defects in semiconductor material introduce allowed energy states within the forbidden bandgap. Assume that a particular defect in silicon introduces two discrete levels: a donor defect level 0.25 eV above the top of the valence band and an acceptor defect level 0.65 eV above the top of the valence band.Analyze which defect level dominates in the semiconductor.Calculate the carrier concentration and Fermi level position with respect to the intrinsic Fermi level if the semiconductor is do

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