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Defects in a semiconductor material introduce allowed energy states within the forbidden bandgap. Assume that a particular defect in silicon introduces two discrete levels: a donor level 0.25 eV above the top of the valence band and an acceptor level 0.65 eV above the top of the valence band. The charge state of each defect is a function of the position of the Fermi level. ( a ) Sketch the charge density of each defect as the Fermi leyel moves from Eq to Ec. Which defect level dominates in (i) h

1 name 3 possible donor defects and 3 possible acceptor defects for a gaas semiconductor 2 why the electron carrier concentration is often taken to be 1016 cm directly at room temperature wh 17136

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