Onsemi says the addition SiC JFET technology will complement its existing EliteSiC power portfolio and enable the company to ...

The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including ...

The bilateral funding from Innovate UK and Innosuisse will support the two-year QDHIGHSWIR research project into overcoming ...

Fraunhofer ISE and partners have developed a SiC-based medium voltage system technology for fast charging stations that will ...

Electrical measurements on these diodes revealed that increasing their temperature from ambient to 573K produces a fall in ...

Preparing to offer just that in significant volume within the next few years is the Israeli-based producer of GaN power ...

Richard Hogg, chief technical officer of UK-based company III-V Epi, is advocating using GaAs epitaxial regrowth for many ...

The US Department of Commerce has signed a preliminary memorandum of terms with Macom Technology to provide up to $70 million ...

Compound Semiconductor™ is an Angel Business Communications publication.

Researchers at Osaka University have demonstrated that low-temperature post-deposition annealing slashes the density of hole ...

Efficient Power Conversion Corporation (EPC) has introduced the GaN-based EPC91200, a fully configured motor drive inverter ...

David Marshall, as director of programmes, will oversee Filtronic’s portfolio of critical programmes, driving strategic ...