Last week we covered diodes, specifically thermionic and PN junction diodes.But oh, there are more; and they’re special! One of the the most commonly used ‘specialty’ diode would have to be ...

A p-n junction is a fundamental building block of modern electronics, formed by joining together two types of semiconductor materials: p-type (positive) and n-type (negative). The junction creates a ...

A diode (one way valve) is a PN junction with p-type on one side and n-type on the other. When a positive voltage is applied to the p-type side (forward bias), ...

Duraton: 4 hours. In this module on pn junction under bias, we will cover the following topics: Energy band diagram of pn junction under bias, Capacitance-voltage characteristics, Impact ionization, ...

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

A research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was ...

The working principles of the spin-torque diode and the semiconductor p–n junction diode are compared in Fig. 4a.As shown in Fig. 4a, when current flows from the n side to the p side, the space ...

A conventional PN junction diode may have a voltage drop between 0.6-1.7 V, whereas the Schottky diode voltage drop is 0.15V ñ0.45V. A lower voltage drop permits a higher switching speed as well ...

The array is situated in a planar region parallel to, and around 100 nm from, the p–n junction. The dislocation loops are typically about 80–100 nm in diameter and are spaced around 20 nm apart.