Rapid formation of radial p–n junctions on electroless-etched silicon nanowires (SiNWs) was successfully demonstrated. With a low-cost objective, a homemade nonhazardous diffusion source of high ...

We report on the demonstration of MOVPE-grown single nanowire InGaN/GaN core–shell light emitting diodes (LEDs) with a transparent graphene contact for hole injection. The electrical homogeneity of ...

A graphical technique for solving the simplified device equation is then described and used to develop and illuminate the family resemblance among a large number of related p-n junction devices; viz., ...

Si LSI manufacturing technology is essential as the foundation of modern society. However, there was no wafer-scale technology for rapid, non-destructive, and non-contact evaluation of the internal ...

Temperature-dependent current–voltage measurements of th p-n diodes verify the presence of the implanted p-n junction and reveal an additional 0.43-eV barrier, which we hypothesize arises from a ...