PN heterojunctions comprised of n-type nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films deposited on p-type Si substrates were fabricated in ...

Rapid formation of radial p–n junctions on electroless-etched silicon nanowires (SiNWs) was successfully demonstrated. With a low-cost objective, a homemade nonhazardous diffusion source of high ...

This paper presents an analytical model with 2-D effects for 1200 V 4H-silicon carbide trenched junction barrier Schottky (TJBS) diodes. Energy band diagrams of junction barrier Schottky and TJBS ...