Scientists in Japan have developed a device that enables external magnetic field control of magnetic injection current in the bulk photovoltaic effect (BPVE), a phenomenon not yet used in commercial ...

We report on homoepitaxial GaN p-n junction diodes with a negative beveled-mesa termination. The electric field distribution in a beveled-mesa was investigated using TCAD simulation, and the devices ...

The diode works like a typical silicon PN junction diode in forward-biased conditions but can handle reversed voltage up to a certain threshold. The formula RS = (Vin – VZ) / Iz is used to determine ...

A traditional PN-junction diode can perform rectification, which isn’t the case with a Gunn diode since it conducts in both directions. But because its two terminals, both with negative dynamic ...

Many semiconductor PN junction diodes are designed to exhibit specific electrical properties; the varactor diode or varicap diode is one such semiconductor — it is specifically designed to exhibit ...

This article discusses the role of the depletion region in a semiconductor p-n junction and the effects of doping concentration on the depletion width.

The charge equations of the varicap diode are solved and show a discontinuity at the junction, hence showing the presence of deterministic chaos. After introducing the varicap diode and the diffusion ...

Nexperia has introduced a 10A 650V silicon carbide (SiC) industrial Schottky diode in a 2pin through-hole TO-220 plastic package. Called PSC1065K, the company is not making its full data sheet public ...

Schottky Barrier Diodes are built utilizing a metal electrode bonded to an N-type semiconductor that has undergone light doping, as opposed to a standard pn-junction diode, which is composed of a ...