After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 ...

The latest EiceDRIVER isolated gate drivers from Infineon Technologies are optimized for SiC technologies targeting electric ...

1: Conduction characteristics of ICeGaN – IGBT combo device.[1] SiC and GaN also complement ... and therefore the flow of current.[5] Vertical devices put more power in less space Increasing the ...

The devices are RoHS-compliant and feature high noise immunity of 50 kV/µs, which is crucial for preventing functional ...

Silicon power electronic devices such as IGBTs and MOSFETs can also be controlled via the gate. Here less speed is required, e.g. 120 MHz arbitrary waveform generation is adequate. Therefore, it can ...

Equipped with an eighth-generation insulated gate bipolar transistor (IGBT), the module minimizes power loss and maximizes output power of inverters and other components in power systems ...

IGBT) 8-inch silicon wafers for the power and sensor markets. As an automotive qualified fab, Polar is committed to the highest levels of manufacturing and product quality. For more information ...

Spirox Corporation (TWSE: 3055), a professional semiconductor equipment provider announced its plan to build the first power semiconductor dynamic reliability verification laboratory in the ...