The latest EiceDRIVER isolated gate drivers from Infineon Technologies are optimized for SiC technologies targeting electric ...

After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 ...

1: Conduction characteristics of ICeGaN – IGBT combo device.[1] SiC and GaN also complement ... and therefore the flow of current.[5] Vertical devices put more power in less space Increasing the ...

Infineon Technologies AG  introduces new isolated gate driver ICs for electric vehicles to enhance its EiceDRIVER family. The devices are designed to use the latest IGBT and SiC technologies.

Pakal Technologies, Inc., an innovator in high-voltage power conversion semiconductor technology, has raised $25 million in Series B funding led by New Science Ventures, with participation from Series ...

The devices are RoHS-compliant and feature high noise immunity of 50 kV/µs, which is crucial for preventing functional ...

Silicon power electronic devices such as IGBTs and MOSFETs can also be controlled via the gate. Here less speed is required, e.g. 120 MHz arbitrary waveform generation is adequate. Therefore, it can ...

Equipped with an eighth-generation insulated gate bipolar transistor (IGBT), the module minimizes power loss and maximizes output power of inverters and other components in power systems ...

Spirox Corporation (TWSE: 3055), a professional semiconductor equipment provider announced its plan to build the first power semiconductor dynamic reliability verification laboratory in the ...

IGBT) 8-inch silicon wafers for the power and sensor markets. As an automotive qualified fab, Polar is committed to the highest levels of manufacturing and product quality. For more information ...