Abstract: The single-event leakage current (SELC) mechanism of the silicon carbide (SiC) junction barrier Schottky (JBS) diode is thoroughly investigated in this work. A comprehensive physical model ...
Abstract: Recent advances in atom-scale manufacturing are paving the way toward the emergence of Field-coupled Nanocomputing (FCN) as a viable real-world post-CMOS technology. Current FCN-specific ...
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