This paper presents an innovative technique to reduce the temperature dependency of transistors. This technique relies on Back-Gate and parasitic diodes biasing, exploiting the Complementary To ...

Incize, a Belgian semiconductor characterisation and modelling company, and Atomera, a US semiconductor materials company, ...

By integrating a negative capacitance dielectric, the researchers have removed this constraint. They say their results demonstrate that negative capacitance can break conventional electrostatic limits ...

Low-loss reverse-conducting normally-OFF double-channel AlGaN/GaN power transistor with the builtin Schottky barrier diode (SBD) has been systematically studied.

Take advantage of current control topologies without self-heating error while retaining the 317/337's fault protection ...