AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they ...

As we see in the J-FET transistor construction diagram, the to N sections are not totally separated. There is a narrow channel of N type material connecting the two main N sections. Bipolar ...

PNP transistor construction. Click to Enlarge. Part 2: MOS Devices and StructuresPart 3: Complex IC Structures *This tutorial is based on Chapter 1 of “Managing Power Electronics: VLSI and DSP-Driven ...

Path 1: Transistor Construction above Copper Interconnects at less than 400C. The first path to monolithic 3D-ICs involves sub-400C transistor construction above copper interconnect layers. Recessed ...

An interesting form of transistor construction has been communicated by Nippon Electric Co. of Tokyo to Standard Telephones Cables Ltd., who have obtained Patent No. 850,081. So, 58 years ago, started ...

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...

There is ample evidence that organic field-effect transistors have reached a stage where they can be industrialized, analogous to standard metal oxide semiconductor (MOS) transistors.

Aside from the obvious improvements in manufacturing technology and miniaturisation, there have only been minor refinements to the CMOS transistors inside a modern CPU. Of course, that is until ...

B. SOI is the natural technology for monolithic 3D IC for all overlaying transistor layers, and monolithic 3D is the most effective path to keep Moore's Law C. SOI, or better 'XOI', is the most ...

SiGe Transistor Patented. AN interesting form of transistor construction has been communicated by Nippon Electric Co. of Tokyo to Standard Telephones & Cables Ltd., who have obtained Patent No.