For the first time, we developed successfully the 512Mb DRAMs using step-gated-asymmetric (STAR) cell transistors with 90nm feature size. The STAR with step recessed channel depth of 40nm exhibits ...

This brief presents an ultra-low voltage level shifter (LS) with fast and energy-efficient voltage conversion from the deep subthreshold region to the superthreshold region. The proposed LS achieves ...