Abstract: This article presents a comprehensive physics-based model for back-end-of-line (BEOL)-compatible oxide-semiconductor-based ferroelectric field-effect transistors (FeFETs). The proposed model ...
Abstract: Two-transistor-zero-capacitor (2T0C) DRAM cell has been proposed and extensively investigated as a memory device for processing-in-memory (PIM) applications. In this two-part article, we ...
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