Gigahertz field-effect transistors (FETs) have been the imperative need for the development of nanoelectronics based on atomically thin transition metal dichalcogenides (TMDs). Yet, WS2 FETs working ...

Intel’s answer to these advanced packaging demands is Foveros. They’ve introduced new solutions, Foveros-B and Foveros-R, ...

As transistor gate lengths are scaled towards the 10-nm range, thermal device design is becoming an important part of microprocessor engineering. Decreasing dimensions lead to nanometer-scale hot ...

We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of destructive single-event effects (SEE) ...