Beyond defence, GaN also has strong civilian potential. “GaN can handle more current and switch at higher frequency, which reduces the size and weight of power systems,” Gupta said, noting that ...

Infineon has announced that notebook adapter maker Chicony Power, has selected the company’s CoolGaN transistors G5 to power multiple laptop adapters designed for a top customer’s notebooks.

Abstract: A series of switchable resonators are proposed by incorporating the parasitic effects of two gallium nitride (GaN) high electron mobility transistor (HEMT) devices in this letter, based on ...

Researchers at Cornell University have developed a powerful imaging technique that reveals atomic scale defects inside computer chips for the first time. Using an advanced electron microscopy method, ...

Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...

Researchers used advanced electron ptychography to visualize atomic-scale defects inside modern transistors. The technique ...

By engineering the device structure of ferroelectric memory and introducing a nanogate-induced electric field concentration effect, the researchers developed a ferroelectric transistor capable of ...

Scientists at the University of Tokyo have captured something never seen before: a frame-by-frame view of how electron spins ...

Cornell researchers have used advanced electron microscopy to identify "mouse bite" defects in 3D transistors for the first time ...

A stunning new imaging breakthrough lets scientists see — and fix — the atomic flaws hiding inside tomorrow’s computer chips.

Cornell researchers have used high-resolution 3D imaging to detect, for the first time, the atomic-scale defects in computer chips ...

Cornell researchers have used high-resolution 3D imaging to detect, for the first time, the atomic-scale defects in computer chips that can sabotage their performance. The imaging method, which was ...