UnitedSiC has added four silicon carbide junction barrier Schottky (JBS) diodes complement its SiC FET and JFET transistor products. The UJ3D 1,200V and 1,700V devices are part of the company’s 3rd ...
The semiconductor industry has a well-established history of “smaller, faster, and cheaper.” Improving performance and reducing device cost while shrinking packaging size is fundamental to virtually ...
IXYS Corporation announced the introduction of the SS150 and SS275 Series High Power Silicon Carbide (SiC) Diodes by its IXYS Colorado division. Three diode configurations provide designers with ...
Dublin, Nov. 14, 2024 (GLOBE NEWSWIRE) -- The "Silicon Carbide (SiC) Diodes Market 2024" report has been added to ResearchAndMarkets.com's offering. This Silicon Carbide (SiC) Diodes market report ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
Vishay Intertechnology, Inc. broadens its optoelectronics portfolio with the introduction of a new high speed silicon PIN ...
MALVERN, Pa., July 09, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low ...
SemiSouth, a little-know semiconductor firm from Mississippi, is introducing high-power silicon carbide JFETs to replace silicon IGBTs and silicon mosfets in high power inverters. The firm already ...
Edward Ong, senior product marketing manager at Power Integrations said: “The Qrr of these new Qspeed diodes is half that of the next best ultra-fast silicon diodes, resulting in very high system ...
There have been great efforts over the past decade to obtain useful, that is, technologically viable and efficient, light emission from silicon both in the visible and infrared regions of the spectrum ...
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