Theodoros Serghiou of the University of Glasgow’s James Watt School of Engineering led the development of the EGOFET. He said ...

Displacing GaAs PAs is a long-term goal for Finwave, which has made progress on many fronts since Lesaicherre took charge in ...

The rapid advancement of the electronics industry is opening new possibilities for the development of increasingly advanced ...

Osaka University's study on VO2 metamaterials demonstrates improved terahertz detection in silicon devices, highlighting ...

Researchers at Osaka University in Suita, Japan, have devised a novel way to improve the performance of electronic devices. The study, published in ACS Applied Electronic ...

The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

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Uncover the inner workings of a graphics card and its components. Explore the architecture and features of the AMD Radeon HD ...

Researchers at Osaka University developed advanced terahertz photodetectors containing ‘living’ microelectrodes. A vanadium ...

Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide (SiC) Schottky diodes in the ...