Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide (SiC) Schottky diodes in the ...
Researchers at Osaka University developed advanced terahertz photodetectors containing ‘living’ microelectrodes. A vanadium ...
Osaka University's study on VO2 metamaterials demonstrates improved terahertz detection in silicon devices, highlighting ...
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
Vishay Intertechnology Launches New High-Efficiency 650 V and 1200 V Silicon Carbide Schottky Diodes
Vishay Intertechnology, Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for high ...
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...
Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy ...
ElFys has launched circular four-quadrant near-infra-red detector with a 14mm diameter active area, leading to 38.5mm2 of ...
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