This paper describes the research on the development on SiC Interposer technology with Through SiC Vias (TSiCV). It demonstrates a SiC Interposer with the Flip-Chip assembled Chips with different ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

Aixtron SE, Fraunhofer IISB and Bimanu Cloud Solutions are cooperating in a €28.4 million project called 'Increasing Energy ...

Radiation effects were demonstrably observed in silicon carbide power MOSFETs caused by heavy ion and proton irradiation. For higher LET ions, permanent damage (increase in both drain and gate leakage ...

Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

This was made possible by changing the “electronic state of matter on demand” through a technique known as thermal quenching.

Binding agents are a critical component of Si-based anodes for lithium-ion batteries. Herein, we introduce a composite hydrogel binder consisting of carbon black (CB) and guar, which is chemically ...

Fluorination has been instrumental for tuning the properties of several two-dimensional (2D) materials, including graphene, h-BN, and MoS2. However, its potential application has not yet been explored ...