Poshun Chiu, Senior Technology & Market Analyst, Compound Semiconductors at Yole Group, discusses the power silicon carbide device market, outlining the anticipated growth to an anticipated $10.

In recent years, silicon carbide (SiC) based devices are increasingly replacing their silicon counterparts in power conversion applications due to their performance superiority. SiC insulated-gate ...

This paper reports research performed on developing and optimizing a process recipe for the plasma etching of deep high-aspect ratio features into silicon carbide (SiC) material using an ...

The simplest form of rhombohedral silicon carbide is unknown. Previous studies of the elusive 9R-SiC have failed to show whether this polytype is stable as a bulk material. Here, we demonstrate that ...