Material optimization: Strain can be applied to overcome doping limitations in semiconductors. (Courtesy: B Huang) A new universal theory and three basic rules for how defects in semiconductors behave ...

Content includes physics of bulk semiconductors, quantum wells, and superlattices, and covers the basic electrical, optical, and transport phenomena in low-dimensional semiconductor structures.

Theory establishes a path to high-performance 2-D semiconductor devices. ScienceDaily . Retrieved June 2, 2025 from www.sciencedaily.com / releases / 2016 / 04 / 160426162552.htm ...

PORTLAND, Ore. — Graphene, sheets of pure carbon atoms akin to unrolled nanotubes laid flat, could herald a new era of ultra-high speed semiconductors. But the precise topology required to make them ...

That's the kind of technology that researchers at Kyoto University have developed for the band gap of semiconductor materials. The work is published in the journal Computational Materials Science.

Electron band theory explains differences in conduction. Semiconductors can be doped with other materials to become p-type or n-type . A p-n junction diode can be forward or reverse bias.

Discovery of non-toxic semiconductors with a direct band gap in the near-infrared. ScienceDaily. Retrieved June 2, 2025 from www.sciencedaily.com / releases / 2021 / 03 / 210323103829.htm.

Solar cells based on wide-band-gap semiconductors work better under water than the narrow-band-gap ones used in conventional silicon photovoltaic devices. This finding by researchers at New York ...