ChangXin Memory Technologies (CXMT) has accelerated its next-generation DRAM development, transitioning from 17nm to 16nm ...

A new technical paper titled “Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors” was published by researchers ...

Tunable lasing at around 405 nm is realised with an InGaN device featuring a narrow-ridge active channel and a periodically ...

The Janus Henderson Global Technology And Innovation Fund returned 3.20% and the S&P 500® Index returned 2.41%. Click here to ...

Ideal for propelling tiny satellites, the lightweight devices could be produced on board a spacecraft and cost much less than ...

To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...

The company had negative free cash flow between fiscal 2016 and 2019 due to its acquisition of Harmonic Drive AG in 2016 and construction of new factories in 2017 and 2018, as well as headwinds from ...

DuPont is in solid financial condition. As of Dec. 31, we calculate a net debt/adjusted EBITDA ratio of around 1.7, a little below management's long-term target of around 2 times. DuPont acquired ...

The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride.