A new palladium-loaded amorphous InGaZnOx (a-IGZO) catalyst achieved over 91% selectivity when converting carbon dioxide to ...

Researchers have demonstrated that by using a semiconductor with flexible bonds, the material can be molded into various ...

Japanese researchers revealed that a novel palladium-loaded amorphous InGaZnOx (a-IGZO) catalyst converted carbon dioxide to ...

A research team affiliated with UNIST has unveiled a new semiconductor device optimized for the next-generation 6G era and ...

In a first for the field, researchers from The Grainger College of Engineering at the University of Illinois Urbana-Champaign ...

Researchers at the University of Strathclyde have developed a new method for assembling ultra-small, light-controlling ...

Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding ...

A new technique from the University of Strathclyde allows ultra-small photonic devices to be measured, sorted, and assembled ...

This material enabled the world’s first p-type power semiconductor developed using a corundum-type gallium oxide compound. This device is still in R&D. NCT, meanwhile, has demonstrated several gallium ...

The National Institute of Information and Communications Technology (NICT), in collaboration with Sony Semiconductor Solutions Corporation (Sony), has developed the world's first practical ...