The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

In this article, a novel structure design concept [plasma spreading layer (PSL)] is introduced into silicon carbide (SiC) merged PiN Schottky (MPS) diode to improve the surge current capability.

Reference K. Kanegae et al. Appl. Phys. Express 18 041001 (2025) Pictured above: Forward current-voltage characteristics of the vertical rutile GeO2Schottky barrier diode, showing clear rectification ...

Vertical diamond Schottky diodes with blocking voltages VBD > 2.4 kV and ON-resistances RON <; 400 mΩcm2 were fabricated on homoepitaxially grown diamond layers with different surface morphologies.