Power Electronics World7h
APC-E to introduce first SiC devices
APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy ...
C&EN20d
Characterization and Modeling of Interfacial Photogating Effect in Graphene Field-Effect Transistor Photodetectors on Silicon
Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech, Blacksburg, Virginia 24061, United States ...
C&EN25d
Solvent Selection as a Key Factor in the Performance of Semitransparent Heterojunctions Composed of Hydrogenated Nanotubes and Bismuth Sulfides
Advanced Materials Centre and Division of Electrochemistry and Surface Physical Chemistry, Institute of Nanotechnology and Materials Engineering, Gdańsk University of Technology, 11/12 G. Narutowicza ...
Compoundsemiconductor.net26d
Boosting AlN-on-AlN Schottky barrier diode performance
due to defect-induced current transport mechanisms in the AlN epilayers. Researchers have recorded values for AlN Schottky barrier diodes that range from 5 to 12. “[Our] work presents an ultra-low ...
EDN27d
A beginner’s guide to power of IQ data and beauty of negative frequencies – Part 1
For example, a transmitted signal is always “real” and is typically shown as something like: This is another formula that creates obfuscation and puts off people just starting out in signal processing ...