The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Like a PN junction diode, the Schottky junction exhibits rectification, but with appropriate doping of the n-type region, forward conduction initiates almost immediately upon application of a positive ...

This study presents the fabrication and characterization of flexible Schottky diodes based on silver (Ag) and polyaniline (PAni) layers, constructed on a recyclable poly (ethylene- co -methyl acrylate ...

Vishay has launched 16 SiC Schottky diodes with 650-V and 1200-V ratings in SOT-227 packages, enhancing efficiency in high-frequency applications. The devices offer, according to the manufacturer, the ...

In a simple test, a 10A application, a Schottky diode with a 0.5V forward drop dissipates 5W of heat. it wastes energy and needs a large heatsink. Additionally, their reverse leakage current increases ...

The team’s diodes, capable of operating at a current density of more than 5 kA cm-2, feature a highly doped Al0.75Ga0.25N contact layer and a lightly doped AlN drift layer. It’s a combination that can ...

Engineers from North Carolina State University and Adroit Materials have raised the bar for the current density of AlN Schottky barrier diodes by three orders of magnitude. The team’s diodes, capable ...

A simple analytical equation has been obtained, which satisfactorily describes the forward nonisothermal current–voltage curve of power Schottky diodes (SDs) with thick drift layer. The equation has ...