Reference K. Kanegae et al. Appl. Phys. Express 18 041001 (2025) Pictured above: Forward current-voltage characteristics of the vertical rutile GeO2Schottky barrier diode, showing clear rectification ...

In this article, a novel structure design concept [plasma spreading layer (PSL)] is introduced into silicon carbide (SiC) merged PiN Schottky (MPS) diode to improve the surge current capability.

A study of the reverse-leakage-current mechanisms in metal-organic-chemical-vapor-deposition (MOCVD)-grown GaN Schottky-barrier diodes is presented. An analysis is carried out of the characteristics ...

A phonon-based theoretical framework for liquids marks a major step toward a universal equation of state with broad implications across physics, chemistry and engineering ...

A hacker’s view on ESD protection can tell you a lot about them. I’ve seen a good few categories of hackers neglecting ESD protection – there’s the yet-inexperienced ones, o… ...

STMicroelectronics’ LEOPOL1 point-of-load step-down converter for Low Earth Orbit (LEO) deployments meets the needs of equipment developers targeting the New Space market, now expanding throughout ...

The low-cost, scalable technology enables seamless integration of high-speed gallium nitride transistors onto a standard ...

TVM could help your money keep up with -- even exceed -- the rate of inflation, since interest and investment returns compound in value over time. Let's say you earn $1 on $100 in your high-yield ...

Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...