Vishay has launched 16 SiC Schottky diodes (650 V and 1200 V) in SOT-227 packages, enhancing efficiency in high-frequency ...

The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...

The basic circuit is a Schottky diode detector between an antenna and a high-gain audio amplifier driving high-impedance headphones; [Ido] built a variation that also has an LM386 amplifier stage ...

Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...

It’s based on a design by [DL5NEG] that uses a single Schottky diode and a handful of passive components. The design is simple, but as with all things RF, details count. Chief among these ...

APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy savings in power supplies across a wide range of applications. Also included ...

Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky ...

650 V and 1200 V Schottky devices claimed to offer best trade-off between capacitive charge and forward voltage drop Vishay ...

Vishay Intertechnology, Inc. has introduced 16 new 650V and 1200V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency ...