Waipahu, Hawaii-based MJ Motorsports has created this cool build with just a few custom accessories and parts - it looks spectacular ...
The SiC MPS diodes from RIR Power Electronics Limited are silicon carbide merged-PiN Schottky devices rated up to 1200 V, combining Schottky and PiN structures to balance low switching losses with ...
SBDs (Schottky barrier diodes) enable fast switching and low forward voltage drop in high-efficiency power designs. Silicon carbide (SiC) power devices offer high efficiency and optimal performance in ...
Abstract: The modeling and parameter extraction of the anti-parallel GaAs Schottky diode for terahertz monolithic-integrated circuit (TMIC) design is proposed in this article. The main advantage is ...
In modern electronics design, power supply efficiency boasts being one of the most important factors. Whether it be a consumer appliance, an industrial machine, or a renewable energy system – energy ...
Good afternoon, and welcome to Diodes Incorporated Second Quarter 2025 Financial Results Conference Call. [Operator Instructions] As a reminder, this conference call is being recorded today, Thursday, ...
Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding portfolio of power electronics components. The PSC20120J and PSC20120L have been ...
The DK5V100R15S from Shenzhen DongKe Semiconductor provides a compelling and drop-in alternative to Schottky rectifiers. In power electronics, minimizing switching losses and improving thermal ...
Abstract: This study presents the fabrication of vertical GaN junction barrier Schottky (JBS) diodes by using magnesium (Mg) ion implantation on a channeling condition and subsequent ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results