Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy ...

During Q4 2024, KnowMade's SiC Patent Monitor showed 900 new patent families and 400 newly granted patents. This period also ...

President Trump’s pick to lead the Federal Communications Commission, Brendan Carr, was widely expected to make life more difficult for media organizations that weren’t aligned with the ...

“If I was a crack dealer, maybe if I broke in the capital [sic] or even have been related to the Bidens. I might have gotten some relief on being in prison innocent,” the ex-zoo owner sai ...

With over twenty years of expertise in silicon carbide development, Infineon adopted a trench-based design to capitalize on the low RDS(on) characteristics of SiC MOSFETs, while ensuring safe oxide ...

For reference, a 300-mm wafer contains roughly 2.3× the number of chips as a 200-mm wafer. Tianyue Advanced has also obtained recognition for its technological achievements, including the “China SiC ...

This issue becomes more challenging with the implementation of SiC devices because their smaller die size reduces the thermal inertia and increases the thermal resistance. This paper explores the ...

Abstract: 4H-silicon carbide (4H-SiC) is promising for photodetectors (PDs) capable of operating at high voltages and elevated temperatures. However, the wide bandgap of 4H-SiC (3.26 eV) restricts its ...

This cutting-edge facility will focus on manufacturing Silicon Carbide (SiC) chips, contributing to India's technological advancement and sustainability goals. The southern state pledged to provide ...