Displacing GaAs PAs is a long-term goal for Finwave, which has made progress on many fronts since Lesaicherre took charge in ...

Teledyne HiRel Semiconductors announces the availability of its latest rad-tolerant wideband 50 GHz RF switch, model ...

One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

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Researchers from Arizona State University are claiming to have fabricated the first AlN transistor that’s grown on a native ...

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Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process ... tolerating up to 900mA/mm saturation currents and high voltage RF-power handling capabilities. The inherent high ...

Soitec's photonics wafers are used for data center optical interconnections as higher communication speeds are needed. Soitec's manufacturing technology seems to be the only efficient and reliable way ...

In addition, it offers RF devices comprising GaN-based die, high-electron mobility transistors, monolithic microwave integrated circuits, and laterally diffused MOSFET power transistors for ...

Forty-five experts from industry and academia met in the magnificent city of Toledo for the second workshop on efficient RF ...