To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...

In a conventional plasma etching chamber, the incident ions bombard the surface and etch holes normal to the surface; angled etching is not possible even when the surface is tilted. To overcome ...

Both capacitively (RIE) and inductively (ICP) coupled plasma etcher with fluorine-based gases (CF4, CHF3, C4F8, SF6), BCl3, nitrogen, argon, and oxygen for anisotropic dry etching of Si-based ...

The discovery was partially accidental, as researchers happened upon it while looking at using high-energy plasma etching to machine ... Fresh from the plasma chamber, a wood sample has a thin ...

Using the charged particles found in plasma is the easiest way to create the very small but deep, circular holes needed for ...

A rich plasma has been made just above the wafer, and the ions are expedited toward the surface to generate a highly powerful anisotropic etch. Using a wafer-level RF source, gas penetrates the top of ...

To this end, they prepared pencil lead samples and placed them in a plasma chamber for different periods ... of the clay ...

such as a gas or plasma, is introduced into the etching chamber. The reactive species chemically modifies the surface layer of the material, creating a modified layer that is more susceptible to ...

Etching products are purified from the chamber. ALE of MoS 2 shows no Raman defect peak after etching, highlighting the low damage etching capabilities of ALE. Image Credit: Oxford Instruments Plasma ...

The researchers compared results from this process to a more advanced cryo-etching process that uses hydrogen fluoride gas to create the plasma. "Cryo etch with the hydrogen fluoride plasma showed ...