Programmable and nonvolatile Schottky junctions are highly desirable for next-generation electronic and neuromorphic systems. However, conventional metal–semiconductor and even van der Waals (vdW) ...

This study presents the fabrication of vertical GaN junction barrier Schottky (JBS) diodes by using magnesium (Mg) ion implantation on a channeling condition and subsequent ultrahigh-pressure ...

Temperature-dependent current–voltage measurements of th p-n diodes verify the presence of the implanted p-n junction and reveal an additional 0.43-eV barrier, which we hypothesize arises from a ...