With advances in LED technology there is a growing demand for measurement systems to evaluate LED characteristics.

PN heterojunctions comprised of n-type nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films deposited on p-type Si substrates were fabricated in ...

A new voltage reference with output dependent upon the threshold voltage of an NMOS transistor is introduced. A low temperature coefficient is achieved by using a pn-junction PTAT current generator to ...