With advances in LED technology there is a growing demand for measurement systems to evaluate LED characteristics.

PN heterojunctions comprised of n-type nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films deposited on p-type Si substrates were fabricated in ...

Forming an optoelectronic device by monolithically integrating metal-oxide on the p-layer of regular p-n diode forming a three-terminal diode. As an emitter, it enables bias tee functionality and ...

Only very recently has there been a report of a p–n diode made with a ferromagnetic material 83, 84 — previous attempts led to poor diodes because the doping level in the intrinsic, or ...

A high yield (>36 wt %) method has been developed of preparing monolayered tungsten dichalcogenide (WS2) quantum dots (QDs) with lateral size ∼8–15 nm from multilayered WS2 flakes. The monolayered WS2 ...

The electrically pumped single-mode lasing emission located at 407 nm with a full width at half-maximum (fwhm) of 0.7 nm was observed based on the self-assembled n-ZnO microcrystalline film/p-GaN ...