This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

In this module, you will learn how to analyze a p-n diode and how it differs from a Schottky diode. Specific items of interest are: a) The capacitance versus voltage relation, b) The diode current, ...

Among the most widely used electronic structures, the p-n junction diode forms the basis of a number of technologies, including solar cells, light-emitting diodes, photodetectors, computers, and ...

The varactor diode capitalizes on the properties of the depletion layer of a p-n diode. Under reverse bias, the carriers in each region-holes in the p type and electrons in the n type-move away from ...

Insets show a GaN p-n diode fabricated on a high-quality bulk GaN substrate and light emission from the junction under forward bias. view more . Credit: Zongyang Hu. WASHINGTON, ...

It is known that the p-n diode can be the basis of an accurate thermometer for cryogenic temperatures up to about 200°C. A constant current is maintained through the diode and the voltage across it ...

The device integrates a traditional two-terminal GaN-based p‒n diode with an additional third terminal (Tt), composed of a metal/Al 2 O 3 dielectric layer directly deposited on the p-layer. This ...

A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...