New oxide and semiconductor combination builds new device potential. ScienceDaily. Retrieved March 4, 2025 from www.sciencedaily.com / releases / 2018 / 01 / 180110112958.htm.

An accidental twist in semiconductor research has led to a breakthrough that could fix a common issue in zinc batteries. A ...

Researchers at Yale University have now grown a 2DEG system on gallium arsenide, a semiconductor that's efficient in absorbing and emitting light. This development is promising for new electronic ...

Semiconductor factories are massive, expensive, and take a while to build. Brooklyn-based Nanotronics wants to change that ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

Plans for a national hub for the development of advanced semiconductor packaging are now underway, following the announcement ...

New centre will support UK and international customers with lab-to-scale packaging of semiconductor components.

Successful development of high-performance amorphous P-type oxide semiconductor using tellurium-selenium composite oxide. Professor Yong-Young Noh from the Department of Chemical Engineering at ...

Ultra-wide bandgap: Gallium oxide has a bandgap of 4.8 eV, which is 3,000 times that of silicon, more than 8X that of SiC, and more than 4X that of GaN. Compact and efficient: Gallium oxide ...

When a semiconductor includes both N-type and P-type materials, it is called a complementary metal-oxide semiconductor (CMOS, pronounced "sea-moss"). How Are Semiconductors Made?