Researchers at Stanford University and TSMC have shown that adding an ultra-thin Al 2 O 3 interlayer improves reliability and ...
La Luce Cristallina today announced it has launched its new CMOS-compatible oxide pseudo-substrate, enabling high-quality, ...
Gallium oxide (Ga₂O₃) is a semiconductor material that could make electronic devices much more energy-efficient than current silicon-based technology. Electronic diodes require two types of ...
A research team led by Professor Hyukjun Kwon from the Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST; President Kunwoo Lee), has ...
A new technical paper titled “Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement ...
Kioxia develops high-density 3D DRAM using stackable oxide-semiconductor transistors Eight-layer transistor stacks show reliable operation in laboratory demonstrations Oxide-semiconductor InGaZnO ...
It has been revealed that simply twisting and stacking two layers of oxide crystals can allow the atomic arrangement itself ...
Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the ...
Electron transport in gallium nitride (GaN) and zinc oxide (ZnO) remains a field of intense study due to the promise these wide energy gap semiconductors hold for high-power, high-frequency and ...
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