In this paper, we demonstrate a fully integrated linear voltage regulator in silicon carbide NPN bipolar transistor technology, operational from 25°C up to 500°C. For 15-mA load current, this ...

AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they ...

A MOS-gated bipolar transistor structure (called MGT), which consists of a MOSFET driving an npn bipolar junction transistor in a Darlington configuration, is experimentally demonstrated in SiC in ...

Mumbai's CAAR classifies Insulated Gate Bipolar Transistors (IGBTs) under CTH 8541.29.00, citing HSN notes. The ruling impacts EV component importers.