Abstract: We show the potential of oxide semiconductor materials (InGaZnO) in 4F 2 DRAM by demonstrating high on-current (>10 µA/cell), extremely low leakage current ( 1 aA/cell), and sufficiently ...
Normally, when you design an electronic gadget, you worry about how hot it will get. Automotive-grade components, for example ...
Materials called relaxor ferroelectrics have been used for decades in technologies like ultrasounds, microphones, and sonar ...
Researchers from MIT and collaborating institutions have, for the first time, directly measured the 3D atomic structure of a ...
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