Abstract: We show the potential of oxide semiconductor materials (InGaZnO) in 4F 2 DRAM by demonstrating high on-current (>10 µA/cell), extremely low leakage current ( 1 aA/cell), and sufficiently ...
Normally, when you design an electronic gadget, you worry about how hot it will get. Automotive-grade components, for example ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results