The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Junction Box Market is Segmented by Type (Non-Metallic Junction Box, Metallic Junction Box), by Application (Photovoltaic ...

This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...

A semiconductor p-n junction diode with heavy doping under consideration is kept in forward biased condition. These are oppositely propagating electron and hole currents. These two streams interact ...

Solution A naive solution is the following: since the Dirac pulse has an infinitesimal duration and reverse biases the diode, the circuit will be crossed by the reverse saturation current for an ...

The diode works like a typical silicon PN junction diode in forward-biased conditions but can handle reversed voltage up to a certain threshold. The formula RS = (Vin – VZ) / Iz is used to determine ...

The simulation of the DC type between 0 V and 20 V shows the output voltage on the resistance R1 dependent on the battery voltage. In this mode, of course, a normal diode does not conduct current. But ...

The point where these two regions meet is termed the 'p-n junction'. The Role of the p-n Junction The p-n junction is the heart of a diode's operation. When these two semiconductor materials are ...

A varactor diode or varicap diode is a semiconductor diode that changes its junction capacitance significantly depending on the applied reverse bias voltage. Many semiconductor PN junction diodes are ...