A new technical paper titled “Simulation of Vertically Stacked 2-D Nanosheet FETs” was published by researchers at Università di Pisa and TU Wien. Abstract “We present a simulation study of vertically ...

GaN suppliers have taken various approaches to packaging, leading to a lack of multiple footprint-compatible sources for ...

This is a combination of two transistors (in one component), that has a Beta of for instance 10’000. Its symbol is a combination of two transistor symbols. The (optional) circle around a transistor ...