Advanced Energy Industries, Inc., a global leader in highly engineered, precision power conversion, measurement and control solutions, announced a new silicon-controlled rectifier power controller ...

A (Ga,Fe)Sb ferromagnetic semiconductor with a Curie temperature (T C) up to 530 K was achieved using step-flow growth on vicinal GaAs substrates, surpassing previous T C records for such materials.

Ferromagnetic semiconductors, which combine semiconductor and magnetic properties, are key to developing spin-based devices. Previously studied materials, such as (Ga,Mn)As, have Curie ...

High source doping is essential in tunnel FETs (TFETs) to support high electric fields necessary to provide sufficient drive currents. High doping is associated with band-tails in the density of ...

Gallium oxide has a band gap of 4.8 eV, with a critical field value of 8 MV/cm. This band gap is 3,000 times that of silicon, more than 8X that of SiC, and more than 4X that of GaN. Theoretically ...

Semiconductors are defined by their behavior with respect to electricity, and they require electricity to do what they do.When connected to a voltage source, a semiconductor will transmit energy ...

An Intrinsic Calculation For BE Semiconductor Industries N.V. (AMS:BESI) Suggests It's 23% Undervalued [email protected] (Simply Wall St) Wed, Oct 16, 2024, 1:37 AM 6 min read ...

The semiconductor giant reported a consolidated revenue of approximately NT$256.95 billion ($7.9 billion) for July 2024, which is a 23.6% increase from June and a substantial 44.7% surge from July ...