The Royal Train will soon leave the station for the last time. King Charles III has accepted it’s time to decommission the train, whose history dates back to Queen Victoria, ...

III-V Epi, a UK-based supplier of III-V epitaxial structures through MBE and MOCVD, has announced that it is bringing its ...

The NCAA is considering a proposal that would allow athletes and staff members to bet on professional sports and shift ...

Roval launched a new range of wheels today, developed with data from winning sprints. That's niche, but I think it makes a ...

Underpinning all this progress is the work of Hiroshi Amano and his colleagues, who made a pivotal breakthrough in GaN ...

However, unlocking the potential of these higher frequencies requires components that combine the high output power and drive capabilities of III/V materials with the scalability and cost-efficiency ...

The statement continued, “This not only increases costs but also raises concerns about sustainability and resource efficiency. For that reason, the direct epitaxial growth of high-quality III-V ...

Using low-bandgap III-V materials such as InAsSb in nanostructured arrays to limit potential loss mechanisms, a 25x improvement in mass specific power and ten thousands times decrease in volume from a ...

They developed a technique called lateral aspect ratio trapping (LART) – a novel selective direct epitaxy method that can selectively grow III-V materials on silicon-on-insulator (SOI) in a lateral ...

In the journal Optical Materials Express ("Experimental realization of deep sub-wavelength confinement of light in a topology-optimized InP nanocavity"), the researchers show that their new nanocavity ...

In the pursuit of next-generation electronic devices, it is not silicon semiconductors leading the way, but III-V semiconductors that are at the forefront of this endeavor. These remarkable compounds, ...