Digi Times1d
Para Light Electronics' seventh-generation IGBT new products - an outstanding solution for enhancing power system efficiency and stability
After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 ...
Compoundsemiconductor.net2d
SemiQ adds 1200V third gen SiC MOSFET
SemiQ Inc, a US SiC company, has announced the QSiC 1200V MOSFET, a third-generation device that shrinks die size while ...
Onsemi Is a Moaty Power Chipmaker With Attractive Opportunities Across Auto and Industrial Markets
We think Onsemi will continue to outgrow its underlying markets by selling greater dollar content into applications like electric vehicles and renewable energy applications, which also helps partially ...
abp LIVE10d
100 Years Of Railway Electrification: It All Started With Bombay's Victoria Terminus — See Timeline
Indian Railways celebrates 100 years of electrification, marking a transition from steam-powered locomotion to a more ...
C&EN17d
Amplifying Electron-Donor Signal of the “Water Gate” Enabled Low Detection Ability of a Field-Effect Transistor-Based Humidity Sensor
School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, PR China ...
IEEE18d
Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power Applications
Abstract: In this study, we investigated the basic characteristics of the n-and p-type gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr). The devices exhibited steep ...
IEEE23d
Investigation of the Effect of Bonding Wires Degradation on Switching Stress Waves Released During Power Cycling in Discrete IGBT
Abstract: Effective condition monitoring (CM) technology ensures the safe operation of insulated gate bipolar transistors (IGBTs). Most CM methods for IGBTs focus on extracting electrical, thermal, ...