The fabrication and demonstration of the 15-kilovolt silicon carbide device helps establish a U.S. pipeline for next-generation power electronics.

Tech Semiconductors Co., Ltd. reported earnings results for the nine months ended September 30, 2026. For the nine months, the company reported sales was CNY 380.77 million compared to CNY 271.39 ...

EVs, renewables, smart grids, 5G and data centers are accelerating SiC/GaN adoption, while local production offers opportunities to ease substrate shortages.Dublin, Sept. 28, 2026 (GLOBE NEWSWIRE) -- ...

Discover how SiC motor drives, isolated ADCs, and advanced gate drivers enable faster switching, precise current measurement, and smoother motor control.

Maximize ROI by prioritizing high-margin GaN, securing long-term substrate supply, diversifying foundries, and targeting telecom, defense and LEO satellite demand.Dublin, Oct. 15, 2026 (GLOBE NEWSWIRE ...

A research team led by the University at Albany has successfully designed, fabricated and demonstrated a rare class of ...

Hyundai Mobis is accelerating efforts to localize automotive semiconductors in partnership with South Korean chipmakers. CEO ...

A half-bridge power module combines low conduction and switching losses with compact integration to improve power density and ...

TORRANCE, Calif., Sept. 28, 2026 (GLOBE NEWSWIRE)-- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast ™ gallium nitride (GaN) and GeneSiC ™ silicon carbide (SiC) ...

Navitas Semiconductor was selected for a U.S. Army-backed program to develop next-generation 10 kV silicon carbide devices for mission-critical defense systems.

The E6 Series includes 500 V and 600 V MOSFETs. The 600 V lineup offers DPAK (TO-252), TO-220FA and TO-220SFA packages across key on-resistance classes, allowing designers to choose from a range of ...