DUBLIN--(BUSINESS WIRE)--The "IGBT and Super Junction MOSFET - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering. The global market for IGBT and Super ...

In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

A transformer designed for high-voltage systems ensures performance with low coupling capacitance, strong insulation & a wide ...

Cambridge GaN Devices (CGD) has revealed more details about a solution that will enable the company to address EV powertrain ...

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a gate driver photocoupler, “ TLP5814H ,” with an ...

On this front, Infineon Technologies offers a wide range of automotive-qualified isolated gate-driver ICs covering the usage of MOSFET, IGBT, and SiC technologies in applications up to 1,200 V.

TDK has shrunk its 500V gate drive transformers to 11 x 13mm and 11mm high, smaller than its existing E10EM series. The new ...

"Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN ...

In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current[1] when the lower arm[2] is turned off, causing malfunctions such as ...