A new palladium-loaded amorphous InGaZnOx (a-IGZO) catalyst achieved over 91% selectivity when converting carbon dioxide to ...

SAN JOSE, CA ― SHENMAO America, Inc. has announced the acquisition of Profound Material Technology Co., Ltd. (PMTC), a premier Taiwan-based manufacturer of high-performance solder balls for ...

Wide Bandgap Semiconductors Market is expected to reach USD million in 2033 by growing at a CAGR of 13.2% during period 2025-2033.

To fabricate their devices, Li and co-workers began by using pulsed laser deposition (PLD) to grow a roughly 50 nm-thick film ...

ESC (Electrostatic Chuck) is a core component in semiconductor manufacturing equipment that uses electrostatic field force to ...

Understanding these dynamics helps companies make informed decisions, drive innovation, and maintain a competitive edge in the market for high-temperature semiconductor devices.

Semiconductor devices for high-temperature applications use a variety of materials such as silicon, SiC, GaN and others. These materials offer different benefits in high-temperature environments.

Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high ...

Just a week after the semiconductor export controls were announced, Mr. Sullivan deployed the “ small yard, high fence ” metaphor to explain the administration’s approach.

A technical paper titled “Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)” was published by researchers at University of Illinois at Urbana–Champaign.

The combination of these characteristics gives wide bandgap semiconductors significant advantages in high-power, high-temperature, and high-frequency applications, as shown in Figure 1.