Following its acquisition of US-based GaN pioneer Transphorm, Renesas Electronics is ramping up its ambitions in the wide-bandgap power semiconductor space. With a bold pivot away from the crowded ...

High power laser diode bar is formed from P-N junctions and powered by injected electric current. In order to drive it, it is essential to have low voltage, high and steady injected current for a ...

Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...

Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

The exploitation of electrode materials with high areal capacity and rate performance under high mass loading is critical for the practical application of sodium-ion batteries (SIBs), and 3D ...

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power ...

Power modules are great for high-power applications, but discrete MOSFETs offer many benefits, making them viable for the ...

For Charles City County, which had to borrow money to pay its bills, the promise of a windfall has butted up against citizens ...

The carbonic current collector of graphene-assembled film (GF) is fabricated at scale by a roll-to-roll process to improve the performance of lithium-ion batteries. The obtained GF current collector ...

In this work, high-performance GaN vertical Schottky barrier diodes (SBDs) are successfully fabricated on the GaN-on-GaN substrate by using the self-alignment trench structure and argon (Ar) ion ...

New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate ...