Following its acquisition of US-based GaN pioneer Transphorm, Renesas Electronics is ramping up its ambitions in the wide-bandgap power semiconductor space. With a bold pivot away from the crowded ...

Ultra-thick and ultra-thin Silicon PIN detectors are specially applied in high particles detections. The corresponding leakage current is investigated. The ultra-thick and ultra-thin gated diodes ...

High power laser diode bar is formed from P-N junctions and powered by injected electric current. In order to drive it, it is essential to have low voltage, high and steady injected current for a ...

Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...

Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

The exploitation of electrode materials with high areal capacity and rate performance under high mass loading is critical for the practical application of sodium-ion batteries (SIBs), and 3D ...

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power ...

Power MOSFET Market Size & Growth Insights: According to the SNS Insider,“The Power MOSFET Market size was valued at USD 27.53 billion in 2024 and is expected to reach USD 48.40 billion by 2032, ...

Power modules are great for high-power applications, but discrete MOSFETs offer many benefits, making them viable for the ...

ST has announce the VIPer11B range of off-line high-voltage converters, which are said to make tiny, efficient, and low-cost ...

For Charles City County, which had to borrow money to pay its bills, the promise of a windfall has butted up against citizens ...